1.0a gl ass passivated ultrafast recovery diode 30 c /w ns v 50 100 200 300 400 600 800 1000 v reverse recovery time (note 2) t HFM101 ? hfm108 characteristi c s ymbol device marking code HFM101 ? hfm108 4 pf 25 a w e ight: 0.01 grams (approx.) case: sod-123fl, molded plastic surge overload rating to 25a peak ultra-fast recovery time ideally suited for automatic assembly low power loss classification rating 94v-o -65 to +150 c features ! ! lo w forward voltage drop, high efficiency ! ! ! ! plastic case material has ul flammability mechanic al d ata ! ! te rminals: solder plated, solderable per mil-std-750, method 2026 ! polarity: cathode band or cathode notch ! marking: type number ! ! lead free: for rohs / lead free version maximum r a tings and electrical characteristics @t a =25 c unless otherwise specified peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r rm s reverse voltage v r(rm s) av erage rectified output current @t l = 100 c i o 1.0 a non-repet i tive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm forward v o ltage @i f = 1. 0a v fm pe a k reverse current @t a = 25 c a t rated dc blocking voltage @t a = 100 c i rm 10 500 a t y pical junction capacitance (note 2) c j t y pical thermal resistance (note 3) r jl operat i ng and storage temperature range t j, t stg note: 1. measured with i f = 0. 5a , i r = 1 .0a, i rr = 0.25a. see figure 5. 2. measured at 1.0 mhz and applied reverse voltage of 4.0 v dc. 3. mounted on p.c. board with 8.0mm 2 land area. 1 of 2 1.0 0.2 2.8 0.1 1.9 0. 1 cath ode band top view 3.7 0.2 0.6 0.25 1.4 0 .15 0.10-0.30 sod - 123fl dimensions in millimeters glass passivated device ! ! 101 hfm units z ibo seno electronic engineering co., ltd. www.senocn.com 102 103 104 105 106 107 rr 108 1.0 1.3 1.7 50 75 hfm hfm hfm hfm hfm hfm hfm a l l d a t a s h e e t
i , peak forward surge current (a) fsm 0 10 20 30 1 10 100 number of cycles at 60 hz fig. 3 peak forward surge current pulse width 8.3ms single half-sine-wave (jedec method) 1 10 100 1 10 100 c , cap acitance (pf) j v , reverse voltage (v) fig. 4 typical junction capacitance r t = 25c f = 1mhz j 0 0.2 0.4 0.6 0.8 1.0 25 50 75 100 125 150 175 200 i , a verage fwd rectified current (a) (av) t , ambient temperature (c) fig. 1 forward derating curve a single phase half-wave 60 hz resistive or inductive load 50v dc approx 50 ni (non-inductive) w 10 ni w 1.0 ni w oscilloscope (note 1) pulse generator (note 2) device under t est t rr settimebasefor5 /10ns/cm +0.5a 0a -0.25a -1.0a notes: 1. rise time = 7.0ns max. input impedance = 1.0m , 22pf. 2. rise time = 10ns max. input impedance = 50 . w w fig. 5 reverse recovery time characteristic and test circuit (+) (+) (-) (-) 0.01 0.1 1.0 10 0.6 0.8 1.0 1.2 1.4 i , inst antaneous fwd current (a) f v , inst antaneous forward voltage (v) fig. 2 typical forward characteristics f t = 25c j pulse width = 300 s 2 of 2 z ibo seno electronic engineering co., ltd. www.senocn.com HFM101 ? hfm108 HFM101 ? hfm108 a l l d a t a s h e e t
|
